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R&D Association for Future Electron Devices |
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R&D Projects Completion Three-Dimension Integrated Circuits (1981-1990) A three-dimensional integrated circuit is a vertically interconnected multilayered device having a different function in each layer. This device features in high-density integration and high-speed parallel signal processing. Incorporation of different functions within the layers increases the possibility of carrying out various complicated functions not possible in conventional two-dimensional ICs. Silicon-On-Insulator (SOI) techniques, Iaser and electron-beam annealing, Iateral solid phase epitaxy, techniques involving low-temperature processing and ultra-thin SOI devices are examples of developments directly resulting from this research. Refractory metal wiring technique and superheteroepitaxial growth of GaAs directly on Si, are also products of this project. These techniques will contribute to realizing high-density 3-D (three-dimensional) memory and logic ICs, ultra fast parallel pattem recognition ICs, and other parallel sensor ICs.
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