Superconducting Electron Devices


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R&D Association for Future Electron Devices

R&D Projects

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Superconducting Electron Devices(1988-1997)

Taking advantage of expected characteristics of superconductive materials, this project intends to investigate and clarify the possibility of High-Tc Superconducting Electron Devices (HTSED). The project has a ten-year R&D schedule which is divided into three phases: i) creation of device concepts of three-terminal devices and studies of high quality film preparation technologies . ii) development of micro-fabrication technologies and verification of transistor action in the fundamental device test elements, and iii) development of prototype three-terminal electron devices. Groups of subcontracted companies are studying various HTSED models and the major results are as follows;

(1)A preliminary In/BRBO/STO (Nb) three-ternlinal stnrcture (superconductive base bipolar-type transistor) was successfully fabricated and its device characteristics were measured. This device showed high current gain operation in both common-base and common-emitter configurations (α-0.94, β-11).
(2) A HTS sampler was developed with 5 ramp-edge junctions, superconducting lines and a superconducting grand plane. The sampler operated at 50 K. A preliminary logic circuit based on HTS-RSFQ was also fabricated, consisting of a flip-flop and a SQUlD, and its basic operation was confinned. The conductance properties of PBCO barrier were studied basically in relation to the characteristics of HTS Josephson junctions.

Superconducting devices are expected to enable ultra high-speed circuit systems and to reduce the power dissipation during ON/OFF switching, and their physical properties will open up new application fields in future electronics.

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