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Superlattice Devices(1981-1990)

A superlattice is a new class of material not accessible by conventional crystal growth techniques and consists of a series of layers of material, each a few atoms thick, and of differing compositions, e.g. GaAs and InGaAs. The superlattice allows greater flexibility for material design, offering higher mobility, higher luminescent quantum efficiency and a tallor-made band structure unlike conventional alloy crystals. In order to establish the fundamental technologies required for superlattice devices with super high-speed information processing, R&D focusing on such technologies as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) was carried out. This project has succeeded in developing the following four devices: resonant hot-electron transistors (using InGaAs/InAIGaAs), modulation-doped field effect transistors (using InAs/GaAs), hot-electron transistors (using InGaAs/InAs), and permeable-base transistors (using Si/Sllicides/Si).

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