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R&D Association for Future Electron Devices

R&D Projects

Ongoing

Development of ultra-low loss power device technology (1998-2002)

·Background

When a new material such as silicon carbide (SiC), referred to as a wide-gap semiconductor is used, conversion loss of electric power is theoretically one hundredth to one three-hundredth less that of a Si device. Accordingly, development of wide-gap semiconductor devices is recognized as an energy-saving technology, and this device is referred to as an ultra-low loss power device. Since it is excellent also in rapid response characteristics, application for use in high-frequency field is expected.

·Purpose

With a view to developing a basic technology which leads to practical utilization of an ultra-low loss high-speed power device superior to a Si semiconductor, attempts are being made to develop a basic element technology to prepare a basic device and to demonstrate superiority of the basic device to a Si device.

·Results

--Development of basic technology--
Substrate preparation technology: With respect to enlargement of aperture, an aperture up to 55mm in diameter was confirmed. With respect to enhancement of quality, no micropipes were observed with aperture of 15mm.

--Device forming technology--
Junction FET: A termination structure was examined, and 3.5kV of withstand voltage was confirmed. With respect to an element device of a junction FET, 600V of withstand voltage and 39m Ωcm²of ON-state resistance were observed.

Micropipe obstruction technology by means of in-process etching	Improvement of MOSFET channel mobility

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