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R&D Association for Future Electron Devices


FED Journal VOL.10 NO.1
SUPPLEMENT 1999
All become download in PDF form.
Contents Vol.10 Suppl.1 1999 (PDF 95KB)
Preface

The Importance of Activating Embryonic Technology Development Today
/H. ISHIKAWA

Papers

Silicon Single-Electron Devices and a Revew of Nanodevice Research in the USA (PDF 5,968KB)
/D. K. FERRY

Room Temperature Silicon Single-Electron Transistor Memory and Switch, and Problems on the Way to Practical Use (PDF 814KB)
/S. Y. CHOU

SiC Crystal Growth and Characterization (PDF 2,063KB)
/E. JANZEN

Epitaxial Growth of SiC by Sublimation Close Space Technique (PDF 1,200KB)
/S. NISHINO

 

Laboratories

(1)Research Center for Interface Quantum Electronics (RCIQE)
/H. HASEGAWA

(2)Center for Cooperative Research in Advance & Technology in Nagoya University
/H. HAYAKAWA

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