An era of reform for the New Century
/S. Oda

Challenge to new silicon devices
/A. Toriumi /J. Koga /R. Ohba /K. Uchida

Silicon nano-scale devices
/H. Kawaura /T. Sakamoto /T. Baba

Monolithic integration of Si-interband tunneling diodes with a MOSFET
for ultralow voltage operation static random access memory
/K. Morimoto /H. Sorada /K. Morita

Progress in R&D of Ultra-Low-Loss Power Device Technologies in Japan
/K. Arai

Current status and prospects of FET-type ferroelectric memories
/H. Ishiwara

Development of the study of tunnel magnetoresistance effect
/T. Miyazaki